Micron Technology DRAM , Part #: MT49H8M36SJ-25:B TR | Dynamic random access memory | DEX Wind Energy NCV7344D10R2G

NCV7344D10R2G

CCY:A12-120P1A

6" FHD IPS AG EDP1

VES:193895

Part #: PIC32MX695F512L-80I/PF | DEX has these features:

Micron Technology DRAM , Part #: MT49H8M36SJ-25:B TR | Dynamic random access memory | DEX Wind Energy NCV7344D10R2GMicron Technology DRAM RLDRAM2, Part #: MT49H8M36SJ 25: B TR features: 533 MHz DDR operation (1. 067 Gb s pin data rate) 38. 4 Gb s peak bandwidth (x36 at 533 MHz clock frequency) Organization 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 8 internal banks for concurrent operation and maximum bandwidth Reduced cycle time (15ns at 533 MHz) Nonmultiplexed addresses (address multiplexing option available) SRAM type interface Programmable READ latency (RL), row