Micron Technology DRAM SDRAMMobile-, Part #: MT46H64M32LFBQ-48 WT:C | Dynamic random access memory | DEX Schurter 8 Gb/s peak bandwidth (x36

8 Gb/s peak bandwidth (x36 at 1066 MHz clock frequency) • Organization – 32 Meg x 18

128K refresh command must be issued in total each 32ms) • HSTL I/O (1

Output Phases: 1

MIL:MT41K256M16TW-107 AAT P

Protocol: Bluetooth v5

Micron Technology DRAM SDRAMMobile-, Part #: MT46H64M32LFBQ-48 WT:C | Dynamic random access memory | DEX Schurter 8 Gb/s peak bandwidth (x36Micron Technology DRAM SDRAMMobile , Part #: MT46H64M32LFBQ 48 WT: C features: VDD VDDQ = 1. 701. 95V Bidirectional data strobe per byte of data (DQS) Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle Differential clock inputs (CK and CK#) Commands entered on each positive CK edge DQS edge aligned with data for READs; centeraligned with data for WRITEs 4 internal banks for concurrent operation Data masks (DM)