Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E IT:C TR | Dynamic random access memory | DEX Wind Park DKx#) and output data clocks

DKx#) and output data clocks (QKx

Part #: MT46H32M32LFB5-5 IT:B TR features: • VDD/VDDQ = 1

The transceiver provides differential transmit capability to the bus and differential receive capability to the CAN controller

Universal AC Input

Xilinx Field Programmable Gate Array Part #XCKU3P-L1SFVB784I

Micron Technology DRAM SDRAM-DDR2, Part #: MT47H128M16RT-25E IT:C TR | Dynamic random access memory | DEX Wind Park DKx#) and output data clocksMicron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E IT: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ