Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-107 IT:K | Dynamic random access memory | DEX Wind Turbines AVY:AL1001A03-E5

AVY:AL1001A03-E5

RDS(on) = 125 mΩ (Max) @VGS = -10 V

2x SD/SDIO

Analog Devices IC OPAMP MSOP-8 AD

Compatibility

Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-107 IT:K | Dynamic random access memory | DEX Wind Turbines AVY:AL1001A03-E5Micron Technology DRAM SDRAM DDR3L, Part #: MT41K128M16JT 107 IT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)