Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A2G8VA-062E IT:B TR | Dynamic random access memory | DEX GE WETA Board 5 V to ±15 V

5 V to ±15 V

Refurbished

AOD:8V0-035-878-C

Xilinx Field Programmable Gate Array Part #XCZU19EG-2FFVE1924I

RF-AMP S35 1

Micron Technology DRAM SDRAM-DDR3L, Part #: MT40A2G8VA-062E IT:B TR | Dynamic random access memory | DEX GE WETA Board 5 V to ±15 VMicron Technology DRAM SDRAM DDR4, Part #: MT40A2G8VA 062E IT: B TR features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose